A University of Pittsburgh researcher has developed a new method to program the electronic properties of a two-dimensional (2D) complex-oxide interface with previously unobserved flexibility and spatial resolution. Using an electron beam lithography system, it is now possible to reversibly pattern the conductivity of LaAlO3/SrTiO3 10 000 times faster than current manufacturing approaches. Given the increased need for high-speed and flexible electronics for a host of applications, including quantum computing and telecommunications, this novel manufacturing method could revolutionize many industries.
Description
Using this method, layers of complex-oxides can be arranged, and each layer programmed to be in any of the following states: an insulating state, a conducting state, a superconducting state, a ferroelectric state, or a ferromagnetic state. This novel approach uses an ultra-low voltage (ULV) electron beam applied to the first layer and can program, and deprogram, a wide variety of artificial quantum materials. This novel manufacturing method could significantly alter the quantum computing industry through the widespread manufacturing of these highspeed materials.
Applications
• Quantum computing
• Microelectronics
• Telecommunications
Advantages
Previously, a method was developed to program the LaAlO3/SrTiO3 interface using a conductive atomic-force microscope (AFM) tip with a spatial resolution of 2 nm. However, this approach has been limited to a one-dimensional system due to constraints imposed by the AFM-based technique.
This novel approach uses an electron beam lithography (EBL) system to pattern surfaces and program the required electronic properties. This technique has many advantages over AFM, including writing speeds 10 000 times faster than the AFM-based approach and the possibility to write 1 billion distinct features in around 15 minutes. A particular advantage is that ultra-low voltage EBL (ULV-EBL) is unlikely to damage complex-oxide materials (which occurs with AFM patterning). The lower voltage used compared to AFM will avoid undesirable behaviors in the complex-oxide sensitive to structural distortions. Finally, ULV-EBL is performed under vacuum conditions, which is known to extend the lifetime of written patterns.
Invention Readiness
Preliminary experiments were performed and demonstrated the viability of using ULV-EBL to modify the electronic properties of 2D complex-oxide interfaces. The ULV-EBL was found to write at speeds of at least 10 mm/s, 10 000 times faster than the AFM-based approach. It was also possible to reverse lines using an AFM, demonstrating reversibility of the process without damaging the interface. Further work is required to optimize this technique including benefits of using other oxides
IP Status
https://patents.google.com/patent/WO2021211197A1
