Magnetism plays a critical role in information technology and forms the basis for non-volatile storage in hard disk drives. A new field called “spintronics” aims to use electronics and electron spin to process information; however, it has been difficult to find appropriate materials, despite nearly two decades of active searching. Spintronics relies on full electrical control over magnetism at room temperature, a concept hailed as the “holy grail” of the field and which would open up an incredible wealth of new opportunities for technological exploitation.
Description
Researchers at the University of Pittsburgh have identified a new phase of an oxide heterostructure composed of two insulating oxides LaAlO3 and SrTiO3. This exhibits a novel ferromagnetic phase which is completely electrically controllable and stable at room temperature. By introducing electronics to the interface, the magnetic contrast can be decreased, implying an antiferromagnetic alignment between the magnetic moments and introduced carriers. This coupling is expected to lead to a wide class of magnetically controllable devices, such as spin-torque transfer, spin-polarized electron transport, electrically controlled spin-wave propagation and detection, large magnetoresistance effects, and spin-transistor behavior, all of which are potentially revolutionary information technologies. In addition, it can be demonstrated that very small domain structures can form in this system, which allow for high storage density and electrical readout.
Applications
· Development of magnetically-controllable devices, such as spin-torque transfer, spin-polarized electron transport, electrically controlled spin-wave propagation and detection, large magnetoresistance effects, and spin-transistor behavior, and associated novel information technologies
· Further development of the nascent field of spintronics
Advantages
· Spintronics provides for lower power consumption, less heat dissipation, non-volatile memory, smaller chip size, and higher processing speeds
· Can form very small domain structures, allowing for high storage density and electrical readout
Invention Readiness
Prototype
IP Status
https://patents.google.com/patent/US20160020382A1; https://patents.google.com/patent/US20180075960A1
