University of Pittsburgh

Ultrahigh Density Patterning of Conducting Media

Quantum computing is a nascent field that is rapidly growing, promising a future of immensely quicker processing and expanded memory storage capabilities by storing information in any superposition of different possible states rather than as a single defined state. Quantum computing still remains a lofty goal, and its realization will require innovative solutions to technical challenges.

Description

Dr. Levy has developed a novel method for using an oxide heterostructure as a “nanoelectronic sketchpad,” suitable for ultra-high-density lithographic patterning of a quasi-2D electron gas. By applying localized electric fields to only 3 unit cells of a polar insulating oxide, an insulator-metal transition is induced with the ability to create localized conducting regions that are useful for ultra-high storage density and information processing, both classical and quantum. All of the functions necessary for information processing, including resistors, capacitors, inductors, and field effect transistors, are all easily fabricated using this method with dimensions as small as 7 nm. On/off states can be made non-volatile, enabling reconfigurable logic devices. The small size of the structures are suitable for use in devices which have a quantum nature, such as single-electron transistors (SETs), which are useful as extraordinarily sensitive charge detectors. This novel method of lithographic patterning could immediately replace magnetic storage materials used in current hard disk drives, a $20B/year industry. It is also possible to integrate these materials with silicon, opening up a new range of uses in nanoscale silicon device technology.

Applications

· Ultra-high storage density
· Reconfigurable logic
· Passive/active “on-the-fly” circuitry
· Agent and/or bio-sensing
· Gate for quantum computing devices
· Development of nanoscale silicon device technology

Advantages

· Storage density is 10x higher than reported existing technology
· Nanoscale wires can be created easily without photoresist
· Nanoscale wires can be erased
· All functions necessary for information processing, except for a power source, can be created on a single platform at the nanoscale.

Invention Readiness

Basic elements of high-density storage have been demonstrated, transistor action has been demonstrated, nanoscale-sized wires have been created.

IP Status

https://patents.google.com/patent/US20080237578A1; https://patents.google.com/patent/US20110215289A1; https://patents.google.com/patent/US20110263116A1